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采用ＴＥＭ观测与Ｘ射线双晶回摆曲线检测化学腐蚀逐层剥离深度相结合的方法，分析了ＳＩＧａＡｓ晶片由切、磨、抛加工所引入的损伤层深度。比较两种方法测量结果上的差异，得出了ＴＥＭ观测到的只是晶片损伤层厚度，而Ｘ射线双晶回摆曲线检测化学腐蚀逐层剥离所得的深度是晶片损伤层及其形成应力区的总厚度的结论
The depth of damaged layer introduced by slicing, grinding and polishing was analyzed by TEM combined with the method of X-ray double-aided swing-back curve detection of chemical etching layer-by-layer peeling depth. Comparing the differences between the two methods, it is concluded that the thickness of the damage layer of the wafer is only observed by TEM. The depth of X-ray double-layer sway curve detection by chemical etching layer-by-layer peeling is the damage layer of the wafer and the stress zone The conclusion of the total thickness