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我们利用自行研制的ＵＨＶ／ＣＶＤ技术在直径３英寸的硅衬底上生长了锗硅外延层，并进行了实时掺杂生长．采用Ｘ射线双晶衍射和二次离子质谱技术确定了外延层的质量与组分，利用扩展电阻仪对外延层电阻率进行了表征，研究了生长特性和材料特性．由此获得生长速率及组分与源气体流量的关系曲线，发现生长速度随Ｇｅ组分的增加而降低，以氢气为载气的Ｂ２Ｈ６对锗硅合金的生长速率有促进作用．
We use the developed UHV / CVD technology to grow a SiGe epitaxial layer on a 3-inch-diameter silicon substrate and conduct real-time doping growth. The quality and composition of the epitaxial layer were determined by X-ray double crystal diffraction and secondary ion mass spectrometry. The resistivity of the epitaxial layer was characterized by extended resistance meter. The growth characteristics and material properties were studied. The growth rate and the relationship between the composition and the flow rate of the source gas are obtained. It is found that the growth rate decreases with the increase of the Ge composition, and the hydrogen gas as the carrier gas promotes the growth rate of the Si-Si alloy.