论文部分内容阅读
制造了注入铍确定发射区和集电区的横向pnp双极晶体管。注入期间,用SiO_2和光刻胶保护基区表面(1～2μm宽),以防止铍离子由此注入。退火期间出现的横向蔓延和扩散,减少了基区宽度,这可通过退火的温度和时间来调整。在n-GaAs有源层和衬底之间淀积一层n型Ga_(0.7)Al_(0.3)As层,铍离子穿透GaAs/GaAlAs界面,在发射区和集电区下面的GaAlAs层内形成了pn结。由于GaAlAs的禁带宽度较大,这就使通过寄生的发射极-衬底二极管的电流比通过GaAs pn结的电流降低了几个数量级。有效基区宽度为0.5μm的器件的共射极电流增益为10。
A lateral pnp bipolar transistor was fabricated by injecting beryllium into the emitter and collector regions. During implantation, the surface of the base region (1 to 2 μm wide) was protected with SiO 2 and photoresist to prevent beryllium ions from being implanted thereby. The lateral spread and diffusion that occurs during annealing reduces the width of the base region, which can be adjusted by the annealing temperature and time. An n-type Ga_ (0.7) Al_ (0.3) As layer is deposited between the n-GaAs active layer and the substrate. Beryllium ions penetrate the GaAs / GaAlAs interface. Within the GaAlAs layer below the emitter and collector regions Formed a pn junction. Due to the larger bandgap of GaAlAs, this reduces the current through the parasitic emitter-substrate diode by several orders of magnitude compared to the current through the GaAs pn junction. The total emitter current gain of a device with a valid base width of 0.5 μm was 10.