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应机械部沈阳仪器仪表工艺研究所的邀请,俄罗斯科学院控制科学研究所所长,V.D.Z_(OTOV)教授于1994年8月6日至8月16日,在沈阳仪器仪表工艺所进行了为期十天的技术交流。Z_(OTOV)教授参观了该所的平面工艺线,薄膜工艺线,厚膜工艺线,力敏、磁敏、热敏传感器实验室和可靠性实验室验室。Z_(OTOV)教授对他发明的“Z效应”敏感元件作了理论分析,并作了现场表演和初步性能测试。
At the invitation of Shenyang Institute of Instrumentation and Technology, Ministry of Machinery, Professor VDZ_ (OTOV), director of Institute of Control Science of Russian Academy of Sciences, from August 6 to August 16, 1994, The day’s technology exchange. Professor Z OTOV visited the facility’s planar process lines, thin film process lines, thick film process lines, force sensitive, magnetosensitive, thermal sensor laboratories and reliability laboratory laboratories. Professor Z OTOT made a theoretical analysis of the “Z Effect” sensitive element he invented and conducted live performances and initial performance tests.