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A new depletion-mode gate recessed AlGaN/InGaN/GaN-high electron mobility transistor(HEMT)with 10 nm thickness of InGaN-channel is proposed.A growth of AlGaN over GaN leads to the formation of twodimensional electron gas(2DEG)at the heterointerface.High 2DEG density(ns)is achieved at the heterointerface due to a strain induced piezoelectric effect between AlGaN and GaN layers.The electrons are confined in the InGaN-channel without spilling over into the buffer layer,which also reduces the buffer leakage current.From the input transfer characteristics the threshold voltage is obtained as 4:5 V and the device conducts a current of 2 A/mm at a drain voltage of 10 V.The device also shows a maximum output current density of 1.8 A/mm at Vds of 3 V.The microwave characteristics like transconductance,cut-off frequency,max frequency of oscillation and Mason’s Unilateral Gain of the device are studied by AC small-signal analysis using a two-port network.The stability and power performance of the device are analyzed by the Smith chart and polar plots respectively.To our knowledge this proposed InGaN-channel HEMT structure is the first of its kind.
A new depletion-mode gate recessed AlGaN / InGaN / GaN-high electron mobility transistor (HEMT) with 10 nm thickness of InGaN-channel is proposed. A growth of AlGaN over GaN leads to the formation of twodimensional electron gas (2DEG) at the heterointerface.High 2DEG density (ns) is achieved at the heterointerface due to a strain induced to effect piezoelectric effect between AlGaN and GaN layers. electrons are confined in the InGaN-channel without spilling over into the buffer layer, which also reduces the buffer leakage current .From the input transfer characteristics the threshold voltage is obtained as 4: 5 V and the device conducts a current of 2 A / mm at a drain voltage of 10 V. The device also shows a maximum output current density of 1.8 A / mm at Vds of 3 V. The microwave characteristics like transconductance, cut-off frequency, max frequency of oscillation and Mason’s Unilateral Gain of the device are studied by AC small-signal analysis using a two-port network. Stability and power performance of t he device is analyzed by the Smith chart and polar plots respectively. To our knowledge this proposed InGaN-channel HEMT structure is the first of its kind.