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采用脉冲激光沉积技术,在c面蓝宝石衬底上制备出了VO_2薄膜。利用X射线衍射、Raman光谱、原子力显微镜对生长的样品的结构和表面形貌进行了表征;利用霍尔效应测试仪和紫外-可见-红外光分光光度计分别测试薄膜的方块电阻和透过率。结果表明:在蓝宝石衬底上生长出了结晶性能良好的VO_2薄膜;相变前后其方块电阻变化高达4个数量级,红外透过率的变化高达56%。VO_2薄膜表现出了良好的金属-绝缘转变特性。
Using pulse laser deposition technology, a VO_2 thin film was prepared on a c-plane sapphire substrate. The structure and surface morphology of the samples were characterized by X-ray diffraction, Raman spectroscopy and atomic force microscopy. The sheet resistance and transmittance of the films were measured by Hall effect tester and UV-Vis-IR spectrophotometer respectively . The results show that VO_2 thin films with good crystallinity are grown on sapphire substrates. The square resistance changes up to four orders of magnitude before and after transformation, and the infrared transmittance changes up to 56%. VO_2 thin film shows a good metal - insulation transition characteristics.