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所有的光电探测器在受到激光辐照时都可能被损坏,对探测器的性能产生不利的影响。为了研究脉冲串激光辐照对光电二极管造成的损伤,建立了脉冲串激光辐照光电二极管的二维轴对称模型及热源模型,采用有限元软件COMSOL Multiphysics模拟了1064nm毫秒级脉冲串激光辐照光电二极管的温度场分布。研究结果表明脉冲个数N为1,3,5,10,30的脉冲激光辐照下,达到光电二极管的熔融损伤阈值所需的脉冲能量密度范围为19.176.4J/cm~2。研究结果对毫秒级脉冲串激光在激光加工以及激光防护的应用方面具有指导意义。
All photodetectors can be damaged when exposed to laser radiation, adversely affecting the performance of the detector. In order to study the damage to the photodiode caused by laser irradiation, a two-dimensional axisymmetric model and a heat source model of the pulsed laser irradiated photodiode were established. The finite element software COMSOL Multiphysics was used to simulate the 1064nm millisecond pulse laser irradiation Diode temperature field distribution. The results show that the pulse energy densities required to reach the threshold value of the photodiode melting damage are 19.176.4 J / cm ~ 2 under pulsed laser irradiation with the number of pulses N of 1, 3, 5, 10 and 30. The result of this study is instructive for millisecond-class pulsed lasers in laser processing and application of laser protection.