论文部分内容阅读
将块体SiC单晶中切割下的晶片经研磨、抛光和腐蚀不同工艺处理后作为籽晶,用物理气相传输法生长SiC晶体,生长时间为10min。用光学显微镜观察晶片生长前后的形貌,讨论了不同处理工艺籽晶对晶体生长的影响。结果表明,研磨和抛光可以去除晶体切割时产生的凹坑和划痕,但残留的研磨变质层和抛光导致的机械损伤层可诱导晶片在高温晶体生长时产生多晶成核,腐蚀可以去除研磨和抛光时产生的机械损伤层,用腐蚀后的晶片作为籽晶,生长的晶体表面光滑,并且能够很好地复制籽晶的结构。
The SiC wafers cut from the bulk SiC single crystal were ground, polished and etched as the seeds, then the SiC crystals were grown by the physical vapor transport method for a growth period of 10 min. The morphologies of the wafers before and after the growth of the wafers were observed under an optical microscope. The effects of the seed crystals on the growth of the wafers were also discussed. The results show that grinding and polishing can remove pits and scratches caused by crystal cutting, but the residual abrasive metamorphic layer and the mechanical damage layer caused by polishing can induce the crystal nucleation of the wafer during the growth of the high temperature crystal, and the corrosion can remove the grinding And the mechanical damage layer generated during polishing, the etched wafer is used as a seed crystal, the grown crystal surface is smooth, and the structure of the seed crystal can be reproduced well.