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本文通过包含ＣｄＳ层的薄膜电致发光（ＴＦＥＬ）器件的有关特性的研究，直接证明了ＳＩＯ２对ＣｄＳ中产生的电子有良好的加速作用，并获得了阈值电压低、Ｂ—Ｖ特性好，亮度较高的红色ＴＦＥＬ器件。我们将硫化镉蒸镀于电致发光器件中，测量这些器件的电学和光学特性，发现含ＣｄＳ的样品的传导电荷明显大于不含ＣｄＳ的样品，这说明硫化镉层可以提供较多的电子．但是，样品ＩＴＯ／ＳｉＯ２／ＺｎＳ：Ｓｍ３＋／ＳｉＯ２／ＣｄＳ／Ａｌ的发光效率低于不含硫化镐的样品，这说明这些电子在进入ＺｎＳ层的过程中能量有所降低．为了提高这些电子的能量，我们制备了样品ＩＴＯ／ＳｉＯ２／ＺｎＳ：Ｓｍ３＋／ＳｉＯ２／ＣｄＳ／Ａｌ，使硫化镉中产生的电子先经过ＳｉＯ２层，再进入发光层．测量结果表明这一样品的最大亮度和发光效率与上述含硫化镉的样品相比分别提高了２．５个和０．５个数量级，与不含硫化镉的样品的亮度接近，但其阈值电压较低，亮度—电压（Ｂ—Ｖ）曲线上升部分较陡，且有一段饱和区．在这一样品达到饱和的电压下，不含硫化镉的样品才刚刚起亮，这说明该样品的发光主要是由于硫化镉增加的电子数目对发光的贡献．同时这些电子在ＳｉＯ２中得到了明显的加速。
In this paper, the related properties of thin film electroluminescent (TFEL) devices containing CdS layers are directly demonstrated that SIO2 has a good accelerating effect on the electrons generated in CdS, and the threshold voltage is low, the B-V characteristics are good, the brightness Higher red TFEL device. We deposited CdS in electroluminescent devices and measured the electrical and optical properties of these devices. We found that the CdS-containing samples have a significantly higher conduction charge than CdS-free samples, indicating that the CdS layer can provide more electrons. However, the luminescence efficiency of the sample ITO / SiO2 / ZnS: Sm3 + / SiO2 / CdS / Al is lower than that of the sample without sulfide, indicating that the energy of these electrons decreases into the ZnS layer. In order to increase the energy of these electrons, we prepared a sample of ITO / SiO2 / ZnS: Sm3 + / SiO2 / CdS / Al so that electrons generated in cadmium sulfide pass through the SiO2 layer first and then enter the light-emitting layer. The measurement results show that the maximum brightness and luminous efficiency of this sample are respectively 2.5 and 0.5 orders of magnitude higher than those of the above samples containing cadmium sulfide, which is close to that of the sample without cadmium sulfide. However, the threshold voltage The lower, brightness-voltage (B-V) curve has a steeper rise and a saturation zone. At the voltage at which this sample saturates, the sample containing no cadmium sulfide has just been illuminated, indicating that the luminescence of this sample is mainly due to the contribution of the increased number of cadmium sulfide to luminescence. At the same time these electrons have been significantly accelerated in SiO2.