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Influence of the parameters of plasma enhanced chemical vapor deposition (PECVD)on the surface morphology of hydrogenated amorphous silicon (α-Si:H) film was investigated. Theroot-mean-square (RMS) roughness of the film was measured by atomic force microscope (AFM)and the relevant results were analyzed using the surface smoothing mechanism of film deposition.It is shown that an α-Si:H film with smooth surface morphology can be obtained by increasingthe PH_3/N_2 gas flow-rate for 10% in a high frequency (HF) mode. For high power, however, thesurface morphology of the film will deteriorate when the SiH_4 gas flow rate increases. Furthermore,optimized parameters of PECVD for growing the film with smooth surface were obtained to beSiH_4: 25 sccm (standard cubic centimeters per minute), Ar: 275 sccm, 10%PH_3/N_2:2 sccm, HFpower: 15 W, pressure: 0.9 Torr and temperature: 350℃. In addition, for in thick film depositionon silicon substrate, a N_2O and NH_3 preprocessing method is proposed to suppress the formationof gas bubbles.
Influence of the parameters of plasma enhanced chemical vapor deposition (PECVD) on the surface morphology of hydrogenated amorphous silicon (α-Si: H) film was investigated. Theroot-mean- square (RMS) roughness of the film was measured by atomic force microscope (AFM) and the relevant results were analyzed using the surface smoothing mechanism of film deposition. It is shown that an α-Si: H film with smooth surface morphology can be obtained by increasing the PH_3 / N_2 gas flow-rate for 10% in a High frequency (HF) mode. For high power, however, the surface morphology of the film will deteriorate when the SiH 4 gas flow rate increases. The optimized parameters of PECVD for growing the film with smooth surface were obtained to be SiH_4: 25 sccm cubic centimeters per minute, Ar: 275 sccm, 10% PH_3 / N_2: 2 sccm, HFpower: 15 W, pressure: 0.9 Torr and temperature: 350 ° C. In addition, for in thick film deposition on silicon substrate, a N_2O and NH_3 preprocessing method is proposed to suppress the formationof gas bubbles.