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采用脉冲激光沉积方法在Si(111)基片上制备了Mg2Si薄膜。研究了激光能量密度、退火气氛及压强、退火温度、退火时间等工艺条件对Mg2Si薄膜生长的影响。用X射线衍射仪分析了Mg2Si薄膜的物相,用原子力显微镜、高分辨场发射扫描电镜表征了薄膜的形貌。实验结果表明:在激光能量密度为2.36 J/cm2,Si(111)基片上室温、真空(真空度10-6Pa)条件下沉积,在Ar气压强为10 Pa,500℃,30 min条件下原位退火得到了纯相、结构均匀、表面平整、厚度约为900 nm的Mg2Si多晶薄膜。
The Mg2Si thin films were prepared on Si (111) substrates by pulsed laser deposition. The effects of laser energy density, annealing atmosphere and pressure, annealing temperature and annealing time on the growth of Mg2Si films were studied. The phase of Mg2Si thin film was analyzed by X-ray diffractometer. The morphology of the film was characterized by atomic force microscopy and high-resolution field emission scanning electron microscopy. The experimental results show that when the laser energy density is 2.36 J / cm 2, the Si (111) substrate is deposited under vacuum at a vacuum of 10-6 Pa at room temperature under an Ar gas pressure of 10 Pa, 500 ° C. and 30 min The bit-annealed Mg2Si polycrystalline thin films with pure phase, uniform structure, flat surface and thickness of about 900 nm were obtained.