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用分子束外延方法在Si衬底上生长Ge_xSi_(1-x)合金不仅需要赝晶生长,而且还必须是层状生长。要在Si衬底上生长高质量的Ge_xSi_(1-x)/Si超晶格,Ge_xSi_(1-x)合金层必须控制在二维生长的临界厚度之内,并选择较低的生长温度。
The growth of Ge_xSi_ (1-x) alloy on Si substrate by molecular beam epitaxy not only needs pseudomorphic growth but also lamellar growth. In order to grow high quality Ge_xSi_ (1-x) / Si superlattices on Si substrate, the layer of Ge_xSi_ (1-x) alloy must be controlled within the critical thickness of two-dimensional growth and the lower growth temperature should be chosen.