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半导体中杂质浓度及其剖面分布对半导体材料的特性,集成电路的生产具有至关重要的意义,在许多半导体的物理特性的研究中也是必不可少的参数.用电容电压法测量半导体中杂质浓度及剖面分布是简单方便的方法.以往的做法是用模拟电路对电容电压信号进行模拟运算以获得杂质浓度与深度的关系.本文介绍用微计算机测量半导体中杂质浓度剖面分布的方法.
Impurity concentration and its profile distribution in semiconductors are of crucial importance for the characteristics of semiconductor materials and the production of integrated circuits, and are also indispensable parameters in the study of the physical properties of many semiconductors. The measurement of impurity concentration And profile distribution is a simple and convenient method.It has been used in analogy to simulate the capacitor voltage signal to get the relationship between impurity concentration and depth.This paper introduces the method of measuring the distribution of impurity concentration profiles in semiconductors by using microcomputer.