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文章从低成本a-Si肖特基电池材料着眼,研究了Au和Ni与辉光放电法制备的非晶态硅所形成的肖特基结特性,即接触势垒的高度?n;二极管的I-V曲线和品质因子. 出于以下目的分别测量经不同表面处理的势垒高度.N等离子体处理竞在生成一层薄的氮化硅膜;H等离子处理则希望进一步饱和硅的悬挂键;氧气下贮存则是模拟在实际形成肖特基结时难以避免的表面氧化过程.其结果如下表所示.
In this paper, we focus on the low-cost a-Si Schottky cell materials, and study the Schottky junction characteristics of amorphous silicon prepared by Au and Ni and glow discharge method, that is, the contact barrier height? N; IV curves and quality factors, respectively, the barrier heights of the different surface treatments are measured for the following purposes: N plasma treatment produces a thin silicon nitride film; H plasma treatment desires further saturation of silicon dangling bonds; oxygen The next storage is to simulate the surface oxidation that is unavoidable at the actual formation of a Schottky junction. The results are shown in the table below.