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We have studied the adsorption of elemental S on the surfaces of NiW alloy substrates where elementary sulfur was used as sulfur source. Compared with those previous investigations which used H2S as the sulfur source and operated in an ultra-high vacuum chamber, we used elemental sulfur as the sulfur source which does not need an ultra-high vacuum chamber but Ar-H protection atmosphere in the process of sulfuration. After sulfuration, epitaxial LZO buffer layers were deposited on these substrates directly. The samples were investigated by means of AFM, XPS, SEM and XRD in this study. The results show that after sulfuration, S forms a c (2×2) structure at a coverage of 0.5 ML, in agreement with previous results, representing the effectiveness of elemental sulfur during the sulfuration process. The c (2×2)-S superstructure on the surface of the NiW substrates has optimized the La2Zr2O7(LZO) buffer layer texture.
We have studied the adsorption of elemental S on the surfaces of atomic silicon was used as sulfur source and operated in an ultra-high vacuum chamber, we used elemental sulfur as the sulfur source which does not need an ultra-high vacuum chamber but Ar-H protection atmosphere in the process of sulfuration. The samples were investigated by means of AFM, XPS The results show that after sulfuration, S forms ac (2 × 2) structure at a coverage of 0.5 ML, in agreement with previous results, representing the effectiveness of elemental sulfur during the sulfuration process. The c (2x2) -S superstructure on the surface of the NiW substrates has optimized the La2Zr2O7 (LZO) buffer layer texture.