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本文对于新型的负电子微分迁移率场效应管内部的电位、沿沟道方向的电场以及载流子浓度的稳态分布进行了二维数值模拟,结果表明通过适当选取器件尺寸、掺杂分布以及偏置电压,沿沟道方向可以产生一个处于负电子微分迁移率范围之内的均匀电场,使沟道具有负RC效应而不出现高场畴.
In this paper, a two-dimensional numerical simulation of the potential, the electric field along the channel and the steady-state distribution of carrier concentration in a novel negative electron differential mobility field effect transistor has been performed. The results show that by properly selecting the device size, doping profile and The bias voltage, along the channel, produces a uniform electric field in the negative electron differential mobility range that gives the channel a negative RC effect without high field levels.