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本研究用膏剂法进行无孔渗硅研究,透射电镜、电子探针和M351腐蚀仪分析证实:获得了致密、无孔隙、具有良好耐磨性和耐腐蚀性的渗硅层,并分析了渗硅层形成机理及表层疏松层以及内部孔隙成因。
In this study, non-porous silicon was studied by using the paste method. Transmission electron microscopy, electron probe and M351 corrosion analyzer were used to confirm that a dense, non-porous silicon layer with good wear resistance and corrosion resistance was obtained. Formation mechanism of silicon layer, formation of loose surface layer and internal porosity.