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前言用扫描电子显微镜(SEM)的二次电子(SE)、电子束感生电流(EBIC)、阴极萤光(CL)信号分别观查了GaAs/GaAlAs DH激光器管芯的形貌、外延层和结区中的微缺陷;用Ga-Kα分布曲线分析了GaAlAs限制层的Al含量;还分析了近结区光电特性。结果表明:外延层的Al组分均匀,有源区结线平直;发现键合工艺存在三个问题,一是大部分管芯在键合时焊料In从热沉漫延到镜面上,复盖了有源区;二是上引线的欧姆接触处的周围存在接触势垒;其次发现引线工艺造成了管芯的损伤。此外,管芯中有形变孪
Preface The morphology of GaAs / GaAlAs DH laser die was observed by scanning electron microscopy (SEM), electron beam induced current (EBIC) and cathodoluminescence (CL) Micro-defects in the junction area; the Al content of the GaAlAs confinement layer was analyzed by the Ga-Kα distribution curve; and the photoelectric properties of the near junction were also analyzed. The results show that the Al composition of the epitaxial layer is uniform and the junction of the active region is straight. Three problems are found in the bonding process. One is that most of the die diffuses solder In from the heat sink to the mirror when bonding, The active area; the second is the ohmic contacts on the lead there is a contact barrier around the contact; Second, lead foundry caused the damage of the die. In addition, the deformation in the die