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研究了氖离子注入诱导 In Ga As/In P量子阱材料带隙变化的规律 .研究结果表明 ,由氖离子注入引起量子阱带隙蓝移 .蓝移的大小与量子阱的宽度 ,阱距表面深度 ,注入离子剂量 ,能量 ,及退火条件有关 .研究所得的参数对设计量子阱集成光器件有重要参考价值
The bandgap variation of In Ga As / In P quantum well material induced by neon ion implantation was studied.The results show that the band gap of quantum well is blue-shifted by neon ion implantation.The size of the blue shift is proportional to the width of the quantum well, Depth, ion implantation dose, energy and annealing conditions.The parameters obtained from the study have important reference value for the design of quantum well integrated optical device