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引入渐变理论 ,通过建立AlGaInP四元系材料渐变异质结能带简单模型 ,分析在渐变长度相同、不同渐变方式下导带边的情况 .分析不同掺杂浓度下 ,渐变区长度变化对势垒尖峰值和n区电势能之间差值的影响 .讨论了渐变方式引入高亮度发光二极管 (HB LED)器件的作用和意义
The gradual change theory is introduced to establish the AlGaInP quaternary material graded heterojunction energy band simple model to analyze the condition of the conduction band edge at the same gradient length and different gradient modes.Analysis of different doping concentration, And the difference between the peak potential and the potential energy of the n region.The role and significance of the gradient mode in introducing a high brightness light emitting diode (HB LED) device are discussed