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由于AlGaN具有高的击穿电场(3 MV/cm,是GaAs的7.5倍),且在AlGaN/GaN异质结处存在高浓度的极化诱导二维电子气,AlGaN基高电子迁移率晶体管是目前最适合应用于微波大功率放大领域的器件。着重对影响高频大功率AlGaN/GaN性能的材料结构和器件制作进行了阐述。
Since AlGaN has a high breakdown electric field (3 MV / cm, which is 7.5 times that of GaAs) and there is a high concentration of polarization induced two-dimensional electron gas at the AlGaN / GaN heterojunction, the AlGaN-based high electron mobility transistor is At present, the most suitable for microwave power amplification devices. The material structure and device fabrication that affect the performance of high frequency and high power AlGaN / GaN are emphatically described.