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采用射频磁控溅射制备Mn掺杂CuO薄膜样品。X射线衍射结果说明薄膜样品为单相结构且沿(111)取向生长。通过样品的XRD精修得到样品的结构和晶格参数,掺杂后薄膜晶体结构有微小畸变。薄膜的高分辨透射电镜研究证明了对结构和晶粒大小等的精修结果,且同时说明Mn以替代Cu的形式掺入了CuO晶格中。通过对样品M-T曲线的分析,得到样品的居里温度为96.5K,近邻Mn离子之间的耦合为铁磁性,并由居里外斯拟合得到Mn离子的有效磁矩为3.1_(μB)。这说明磁性不是来自于团聚的Mn原子或铜锰的其它氧化物,而很可能来自于替住的锰离子所形成的Mn-O-Cu-O-Mn之间的铁磁性耦合。
Mn-doped CuO films were prepared by RF magnetron sputtering. X-ray diffraction results indicate that the film samples are single-phase structures and grown in (111) orientation. The structure and lattice parameters of the samples were obtained by XRD refinement of the samples, and the crystal structure of the films was slightly distorted after doping. High-resolution transmission electron microscopy studies of thin films demonstrate the refined results of structure and grain size, and at the same time indicate that Mn is incorporated into the CuO lattice in the alternative to Cu. The Curie temperature of the sample is 96.5K by analyzing the curve of the sample MT. The coupling between adjacent Mn ions is ferromagnetic, and the effective magnetic moment of the Mn ion obtained by fitting Curie’s is 3.1_ (μB) . This indicates that the magnetism is not from the agglomerated Mn atoms or other oxides of Cu and Mn, but probably from the ferromagnetic coupling between Mn-O-Cu-O-Mn formed by the displaced Mn ions.