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以Si(100)为衬底,采用磁控溅射和射频等离子体增强化学气相沉积系统制备了Si(100)/Al膜/非晶Si膜结构的样品。对该样品进行Al诱导真空退火以制备多晶硅薄膜,采用X射线衍射仪(XRD)和AFM分析薄膜微结构及表面形貌。实验结果表明,在经过500℃、550℃Al诱导退火后,形成了择优取向为〈111〉晶向的多晶硅薄膜。AFM给出了550℃退火后薄膜表面形貌,为100～200nm大小的圆丘状硅晶粒,密集排列在薄膜表面;并对Al诱导真空退火晶化的机理进行了分析。
A Si (100) / Al film / amorphous Si film was fabricated on a Si (100) substrate by magnetron sputtering and radio frequency plasma enhanced chemical vapor deposition. The sample was annealed in Al to prepare a polycrystalline silicon thin film. The microstructure and surface morphology of the thin film were analyzed by X-ray diffraction (XRD) and AFM. The experimental results show that after the Al-induced annealing at 500 ℃ and 550 ℃, a polycrystalline silicon thin film with a preferred orientation of <111> is formed. The surface morphology of the films annealed at 550 ℃ is given by AFM. The size of the dome-shaped silicon grains is about 100 ~ 200nm, which is densely arranged on the surface of the film. The mechanism of Al-induced annealing in vacuum annealing is also analyzed.