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通过比较干法和浸没光刻技术在超越焦深(DOF)提高方面的一些主要特点,举例说明了采用浸没式光刻技术的许多优势。浸没式光刻技术同干法光刻技术比较起来改善了关键尺寸一致性(CDU)又避开了必需而强硬的分辨率提高技术(RET)。因此利用浸没式光刻技术能够有效地减少光学邻近校正(OPC)的麻烦。就成像技术而言,我们研究了光刻技术对畸变的敏感性和浸没式光刻技术光源光谱带宽对强光相对曝光量对数E95波动性能的优势。去年已经见证了被认为对浸没光刻技术在批量生产中主要难题的套刻精度、缺陷控制和焦平面精度方面有效的改进。如今55nm逻辑器件的生产制造技术要求的挑战已经得到了满足。浸没光刻技术的成就包括抗蚀剂圆片内10nm套刻精度和圆片间20nm的套刻精度,每一圆片上低于10个缺陷以及在整个圆片上40nm以内的焦平面误差。我们形成了一个顶涂层抗蚀剂工艺。总之,浸没光刻技术是55nm节点逻辑器件最有希望的制造生产技术,它可提供与干法ArF光刻技术在CDU控制、套刻性能和焦平面精度方面等效的解决方案,缺陷程度没有增加。NEC电子公司今年采用浸没光刻技术完成了55nm逻辑器件“UX7LS”的开发和试生产并形成这种UX7LS的批量生产光刻技术。
By comparing some of the key features of dry-process and immersion lithography in terms of increased DOF enhancement, many of the benefits of immersion lithography are illustrated. Immersion lithography improves the critical dimension uniformity (CDU) in comparison with dry lithography and avoids the necessary and tough resolution enhancement techniques (RET). Therefore, the use of immersion lithography can effectively reduce the optical proximity correction (OPC) trouble. In terms of imaging technology, we have investigated the sensitivity of lithography to distortion and the benefits of immersion lithography light source spectral bandwidth to the logarithmic E95 fluctuation of glare relative exposure. Last year witnessed an effective improvement in overlay accuracy, defect control and focal plane accuracy considered to be a major challenge in immersion lithography in mass production. Today’s 55nm logic device manufacturing technology challenges have been met. Achievements of immersion lithography include 10nm nesting accuracy in resist wafers and overlay accuracy of 20nm between wafers, less than 10 defects per wafer, and focal plane errors up to 40nm across the wafer. We formed a topcoat resist process. In summary, immersion lithography is the most promising manufacturing technology for 55nm node logic devices and provides a solution equivalent to dry ArF lithography for CDU control, overlay performance, and focal plane accuracy without increase. This year, NEC Electronics completed the development and pilot production of the 55nm logic device “UX7LS” using immersion lithography and formed the UX7LS mass-production lithography technology.