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通过磁控溅射方法制备了不同成分的GeTe-Sb薄膜,利用电阻-温度(R-T)测试、X射线衍射(XRD)和电子显微学方法对其进行了电学性能和微观结构的表征。发现薄膜的晶化温度随着Sb含量的增加先升高后降低;XRD分析表明Sb含量的不同导致薄膜晶体结构的不同,GeTe-9.9%Sb和GeTe-21%Sb为GeTe型立方结构,GeTe-58%Sb,GeTe-72%Sb和GeTe-81.5%Sb呈Sb型菱方结构。在GeTe型和Sb型结构中,薄膜的晶粒尺寸都与晶化温度变化趋势相反。原位加热实验证实了Sb的加入对薄膜结晶机制产生了很大影响,GeTe-9.9%Sb是典型的形核主导,而GeTe-72%Sb则更趋向于生长为主导的结晶机制。
GeTe-Sb thin films with different compositions were prepared by magnetron sputtering. Their electrical properties and microstructure were characterized by resistance-temperature (R-T) test, X-ray diffraction (XRD) and electron microscopy. It was found that the crystallization temperature of the films first increased and then decreased with the increase of Sb content. XRD analysis showed that the crystal structure of the films was different due to the different Sb contents. GeTe-9.9% Sb and GeTe-21% Sb were GeTe- -58% Sb, GeTe-72% Sb and GeTe-81.5% Sb are Sb-type rhombohedral structures. In both GeTe and Sb-type structures, the grain size of the films is opposite to that of the crystallization temperature. In-situ heating experiments confirmed that the addition of Sb has a great influence on the crystallization mechanism of the films. GeTe-9.9% Sb is the typical nucleation dominant, whereas GeTe-72% Sb tends to be the dominant crystal growth mechanism.