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由于InSb半导体材料具有电子有效质量小、禁带宽度窄、高电子迁移率等优点,因此广泛地被用来制造红外器件。为了提高材料的利用率,我们对正常工艺过程中切下的不合格的区熔锭条头部(含有大量受主杂质的头部)进行回收试验。InSb头部主要含有Zn,Cd等杂质,依据半导体材料的提纯技术及升华原理,再次回炉蒸发掉大部分受主杂质,然后再区熔,就有可能使这部分头部的性能转好,经过反复试验证明此部分材料可以再利用,电性能完全达到正常工艺的水平,为国家节省了开支。
InSb semiconductor materials are widely used to fabricate infrared devices due to their advantages of small electron effective mass, narrow band gap, and high electron mobility. In order to improve the material utilization, we conducted a recovery test on the head of the failed zone ingot cut in the normal process (head containing a large amount of acceptor impurities). InSb head mainly contains impurities such as Zn and Cd. According to the purification technology of semiconductor materials and the sublimation principle, it is possible to make the performance of this part of the head turn better by remelting most of the acceptor impurities by remelting again and then zone melting, Repeated tests show that this part of the material can be reused, the electrical properties fully reach the level of normal technology, saving for the country.