论文部分内容阅读
七十年代以来,对Cds等Ⅱ-Ⅵ族化合物半导体的受激发射的研究,推动了高激发密度半导体研究的发展,已经从实验和理论上认识到激子-电子散射发光是在100K以上温度时一种主要的复合过程,可以产生较高的增益。以往的工作多是偏重于受激发射研究,以获得激光的输出,讨论结果偏重于发射带随温度的变化关系,对于散射发光的动力学过程研究很少。 近年来,由于快速光学信息处理的研究发展,人们对这类材料的光学非线性及双稳态现象很感兴趣。这是因为激子等元激发态产生的光学非线的弛豫时间短,有良好的响应特性。 本文中,我们研究了CdS单晶中高激发密度下的激子-电子散射发光过程。从发光带的
Since the 1970s, the research on the stimulated emission of Ⅱ-Ⅵ compound semiconductors such as Cds has promoted the development of high-density semiconductor research. It has been experimentally and theoretically realized that the exciton-electron scattering luminescence is at a temperature above 100K When a major composite process, can produce higher gain. Previous work mostly focused on stimulated emission studies to obtain the output of the laser. The discussion focused more on the relationship between the emission band and temperature, and few studies on the kinetics of the scattered light emission. In recent years, due to the rapid optical information processing research and development, people are very interested in the optical nonlinearity and bistable phenomenon of such materials. This is because the exciton and other excited states generated by the optical nonlinear relaxation time is short, with good response characteristics. In this paper, we investigate the exciton-electron scattering luminescence at high excitation densities in CdS single crystals. From the glow belt