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本文概述 Si—LiX 射线探测器用优质悬浮区熔硅单晶的研制,着重叙述如何降低区熔硅单晶中的氧含量的试验。探索出降低区熔硅单品氧含量的规律,得出制备 Si—Li 探测器优质硅单品的最佳工艺。初步研制出 Si—Li 探测器用优质硅单晶,其参数为:p 型,电阻率1000—3000欧姆一厘米,少子寿命≥500微秒,无位错,氧含量5.2×10~(15)—1×10~(16)原子/cm~8。
This article summarizes the development of high-quality, single-crystal, fused-silicon wafers for Si-LiX-ray detectors, highlighting how to reduce the oxygen content of the zone-melting silicon single crystals. Explored the rules of reducing the oxygen content in the molten silicon single product, and obtained the best process for preparing high quality silicon single product of Si-Li detector. Si-Li detector has been primarily developed for the production of high-quality silicon single crystal with the following parameters: p-type, resistivity of 1000-3000 ohms per centimeter, less than 500 microseconds of life, no dislocation, oxygen content of 5.2 × 10-15 1 × 10 ~ (16) atoms / cm ~ 8.