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介绍了 AlGaAs/GaAs 多量子阱红外探测器(QWIP)暗电流与噪声的关系和降低暗电流的途径;基手湿法化学腐蚀工艺制作了300μm×300μm台面单元器件,并用变温液氦杜瓦测试系统在不同温度下对红外探测器暗电流进行了测试并分析。在温度小于40 K 时,随着温度的改变暗电流没有明显的变化;当温度大于40 K 时,暗电流随着温度的升高迅速变大,正、负偏压下 QWIP 暗电流具有不对称特性。
The relationship between dark current and noise of AlGaAs / GaAs multiple quantum well infrared detector (QWIP) and the way to reduce dark current were introduced. The 300μm × 300μm mesa unit device was fabricated by basal wet chemical etching process. The system tests and analyzes the infrared detector dark current at different temperatures. When the temperature is less than 40 K, there is no obvious change of dark current with the change of temperature. When the temperature is higher than 40 K, the dark current rapidly increases with the increase of temperature. The asymmetry of QWIP dark current under positive and negative bias characteristic.