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通过关于电力半导体器件 GAT的集电结耗尽层电位分布和电场分布的二维解析模型定量研究了优化设计 GAT的工艺参数和结构参数的关系 ,即抗核辐照器件 GAT的优化设计必要条件
Through the two-dimensional analytical model about the depletion layer potential distribution and the electric field distribution of the collector junction of the power semiconductor device GAT, the relationship between the process parameters and the structure parameters of the optimized design GAT is quantitatively studied, that is, the optimal design requirement of the GAT