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使用稀土元素Tb作催化剂,通过氨化溅射在Si(111)衬底上的Ga2O3/Tb薄膜,成功制备出GaN纳米棒.X射线衍射测试显示,GaN纳米棒具有六方结构.利用扫描电子显微镜和高分辨透射电子显微镜观察分析得出,纳米棒为单晶GaN,纳米棒的直径为50-150nm,长度约10μm.光致发光谱在368.6nm处有一强的紫外发光峰,说明纳米棒具有良好的发光特性.讨论了GaN纳米棒的生长机制.
The GaN nanorods were successfully prepared by ammoniating sputtered Ga2O3 / Tb thin films on Si (111) substrate by using rare earth element Tb as catalyst. The X-ray diffraction results showed that the GaN nanorods had a hexagonal structure. Scanning electron microscopy And high-resolution transmission electron microscope observation and analysis, the nanorods are single crystal GaN, the diameter of the nanorods is 50-150nm and the length is about 10μm. The photoluminescence spectrum has a strong ultraviolet luminescence peak at 368.6nm, indicating that the nanorods have Good luminescent properties. The growth mechanism of GaN nanorods is discussed.