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用射频分子束外延技术研制出了室温迁移率为 10 35 cm2 /(V· s) ,二维电子气浓度为 1.0× 10 1 3cm- 2 ,77K迁移率为 2 6 5 3cm2 /(V· s) ,二维电子气浓度为 9.6× 10 1 2 cm- 2 的 Al Ga N/Ga N高电子迁移率晶体管材料 .用此材料研制的器件 (栅长为 1μm,栅宽为 80μm,源 -漏间距为 4μm )的室温非本征跨导为 186 m S/m m,最大漏极饱和电流密度为 92 5 m A/m m,特征频率为 18.8GHz.
The molecular mobility of 10 35 cm2 / (V · s), the two-dimensional electron gas concentration of 1.0 × 10 13 cm -2 and the mobility of 77 K were 263 cm 2 / (V · s) ) And an Al Ga N / Ga N high electron mobility transistor with a 2-D electron gas concentration of 9.6 × 10 12 cm-2.The devices fabricated with this material (gate length 1 μm, gate width 80 μm, source-drain The room temperature extrinsic transconductance was 186 m S / mm with a maximum drain saturation current density of 92 5 m A / mm and a characteristic frequency of 18.8 GHz.