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把晶体三极管视力以基极电荷控制的电流源的方法是众所周知的电荷控制法。如果采用这种方法,则可把基极电荷与被控制的电流之比看作是晶体三极管的基本参数。由于这些具有时間因子的参数在晶体三极管大信号工作线路的設計中起着重要的作用,因此,在本文中将介紹对晶体三极管的作用区基极时常数和飽和区的时常数(飽和时常数)的测量,以及对在测量过程中所遇到的各种問题所进行的研究結果。被测晶体三极管是一种中速、中等輸出功率結式锗合金开关晶体管2SA173。
The method of visualizing the current of a transistor with a base charge controlled current source is the well-known charge control method. If this method is used, the ratio of the base charge to the controlled current can be taken as the basic parameter of the transistor. Since these parameters with time factor play an important role in the design of large-signal transistors, it is necessary to introduce the time-base constants and saturation time constants of the active region of the transistor (saturation time constant Number) measurements, as well as on the various problems encountered in the measurement process conducted by the findings. The transistor under test is a medium speed, medium output power junction germanium alloy switching transistor 2SA173.