【摘 要】
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Sn-doped Ge2Sb2 Te5 thin films deposited on Si(100)/SiO2 substrates by rf magnetron sputtering are investigatedby a differential scanning calorimeter, x-ray dif
【机 构】
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Research Center of Functional Semiconductor Film Engineering and Technology, Shanghai Institute of M
论文部分内容阅读
Sn-doped Ge2Sb2 Te5 thin films deposited on Si(100)/SiO2 substrates by rf magnetron sputtering are investigatedby a differential scanning calorimeter, x-ray diffraction and sheet resistance measurement. The crystallizationtemperatures of the 3.58 at. %, 6.92 at. % and 10.04 at. % Sn-doped Ge2Sb2 Te5 thin films have decreases of 5.3,6.1 and 0.9 ℃, respectively, which is beneficial to reduce the switching current for the amorphous-to-crystallinephase transition. Due to Sn-doping, the sheet resistance of crystalline Ge2Sb2 Te5 thin films increases about 2-10times, which may be useful to reduce the switching current for the amorphous-to-crystalline phase change. Inaddition, an obvious decreasing dispersibility for the sheet resistance of Sn-doped Ge2Sb2 Te5 thin films in thecrystalline state has been observed, which can play an important role in minimizing resistance difference for thephase-change memory cell element arrays.
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