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8～14微米HgCdTe器件己取得较高性能,美、英、法、日本、西德等许多国家有多种商品出售,阵列工艺与器件可靠性能适应军事和空间技术等许多领域的需要,己在这些领域中占有重要地位。基于以上情况,可以认为HgCdTe材料与器件工艺己趋于成熟。本文简介国外8～14微米HgCdTe材料与器件的某些进展及其应用现状,并对HgCdTe器件今后的发展作了粗略估计。
8 ~ 14μm HgCdTe devices have achieved higher performance, the United States, Britain, France, Japan, West Germany and many other countries have a variety of products sold, array technology and device reliability to meet the needs of military and space technology and many other areas, has been These areas occupy an important position. Based on the above, it can be considered HgCdTe materials and device technology has matured. In this paper, some advances and applications of HgCdTe materials and devices in foreign countries of 8 ~ 14 μm are briefly introduced, and the future development of HgCdTe devices is briefly estimated.