论文部分内容阅读
提出了一种梯度氮化法制备出低阻、高稳定性的α-Ta(N)/TaN双层Cu扩散阻挡层。该方法有效地避免了异质元素的引入和高N含量导致的高电阻率。用四点探针(FPP)、X射线衍射(XRD)、高分辨透射电子显微镜(HRTEM)进行薄膜电性能和结构的表征。分析结果表明,梯度氮化工艺能调控金属Ta膜的相结构和金属Ta中的N原子浓度,从而获得低阻α-Ta(N)/TaN双层Cu扩散阻挡层结构。600高温老化退火的实验结果进一步证明此结构具有高的热稳定性。
A gradient nitridation method was proposed to prepare a low-resistance, high-stability α-Ta (N) / TaN double Cu diffusion barrier. The method effectively avoids the introduction of heterogeneous elements and high resistivity caused by high N content. Four-point probe (FPP), X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM) were used to characterize the electrical properties and structure of the films. The results show that the gradient nitridation process can control the phase structure of the metal Ta film and the concentration of N atom in the metal Ta, so as to obtain a Cu-barrier barrier layer with low resistance α-Ta (N) / TaN. The results of 600 high temperature aging annealing further prove that the structure has high thermal stability.