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本文概述了半导体表面及界面原子几何结构的现代测定方法,论述了具有闪锌矿结构的复合半导体(110)面上表面结构与化学键的关系。以铝沉积在GaAs(110)面上形成的结构为例,说明了当一活性金属与一复合半导体表面相互作用时出现的化学过程。与铝不同,锑在GaAs(110)面上形成的是饱和单层结构,其几何结构反映了第Ⅲ～Ⅴ组材料在分子束外延法生长过程中出现的表面化学过程的性质。
This paper presents an overview of the modern methods for determining the geometry of the semiconductor surface and interfacial atoms, and discusses the relationship between the surface structure and the chemical bonds on the (110) face of a compound semiconductor with a sphalerite structure. Taking the structure of aluminum deposited on the GaAs (110) plane as an example, the chemical process that occurs when an active metal interacts with a composite semiconductor surface is illustrated. Unlike aluminum, antimony forms a saturated monolayer on the GaAs (110) surface and its geometry reflects the nature of the surface chemical processes that occur during the growth of the Group III-V materials by molecular beam epitaxy.