Modeling of current mismatch induced by random dopant fluctuation in nano-MOSFETs

• 作 者: 吕伟锋 孙玲玲
• 机 构: Key Laboratory of Ministry of Education for RF Circuits and Systems,Hangzhou Dianzi University,Insti
• 出 处: 半导体学报
• 发表日期: 2011年08期
• 关键词: fluctuation mismatch deviation drain fitting illustrate utilized extracting appl

Deviation of threshold voltage and effective mobility due to random dopant fluctuation is proposed.An improved 65 nm average drain current MOS model calledαlaw is utilized after fitting HSPICE simulating data and extracting process parameters.Then,a current mismatch model of nanoscale MOSFETs induced by random dopant fluctuation is presented based on propagation of variation theory.In test conditions,the calculated standard deviation applying this model,compared to 100 times Monte-Carlo simulation data with HSPICE,indicates that the average relative error and relative standard deviation is 0.24%and 0.22%,respectively.The results show that this mismatch model is effective to illustrate the physical mechanism,as well as being simple and accurate.

Deviation of threshold voltage and effective mobility due to random dopant fluctuation is proposed. An improved 65 nm average drain current MOS model called αlaw is utilized after fitting HSPICE simulating data and extracting process parameters. Chen, a current mismatch model of nanoscale MOSFETs induced by random dopant The fluctuation is presented based on propagation of variation theory. In test conditions, the calculated standard deviation applied this model, compared to 100 times Monte-Carlo simulation data with HSPICE, indicates that the average relative error and relative standard deviation is 0.24% and 0.22% , respectively. The results show that this mismatch model is effective to illustrate the physical mechanism, as well as being simple and accurate.