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用350～450℃低温射频溅射,接着用连续CO_2激光退火处理,己在铂箔和硅片上制备了具有相当好铁电性能的PbTiO_3(钛酸铅)薄膜。已发现在辐照区有明显的顺电相向铁电相转变的相变,而邻近区域并无温升。通过瞬态深能级谱方法还研究了激光退火对于PbTiO_3膜MOS结构的硅-二氧化硅界面电子态的影响,并且发现SiO_2上的铂电极对于避免界面附近电子态的劣化是有效的。
PbTiO_3 (lead titanate) thin films with good ferroelectric properties have been prepared on platinum foil and silicon wafer by low temperature RF sputtering at 350-450 ℃ followed by continuous CO_2 laser annealing. It has been found that there is a significant phase transition from paraelectric phase to ferroelectric phase in the irradiated zone without any temperature rise in the adjacent zone. The effect of laser annealing on the Si-Si interface electronic states of PbTiO_3 film MOS structure was also studied by transient deep level spectral method. It was found that platinum electrode on SiO_2 was effective in avoiding the deterioration of the electronic states near the interface.