The fabrication of vibration energy harvester arrays based on AlN piezoelectric film

• 作 者: 尚正国 李东玲 温志渝 赵兴强
• 机 构: Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology, Chongqing Universi
• 出 处: Journal of Semiconductors
• 发表日期: 2013年11期
• 关键词: piezoelectric fabrication magnetron sputtering nitride remarkable fabricating ac

The fabrication and measurement results of the vibration energy harvester arrays based on the piezoelectric aluminum nitride(AlN)film are presented.The structure design and fabrication process of the device are introduced.The key material,the AlN film with crystal orientation(002),was deposited by pulsed-DC magnetron sputtering and characterized by X-ray diffraction(XRD).The resonant frequency,power out,and the open circuit voltage of the device are detected.The optimized load of 80 k and a remarkable maximum power out of 30.4 W are obtained when the acceleration of 0.9g(g is standard gravity acceleration)is applied.

The fabrication and measurement results of the vibration energy harvester arrays based on the piezoelectric aluminum nitride (AlN) film are presented. The structure design and fabrication process of the device are introduced. The key material, the AlN film with crystal orientation (002), was deposited by pulsed-DC magnetron sputtering and characterized by X-ray diffraction (XRD). The resonant frequency, power out, and the open circuit voltage of the device are detected. The optimized load of 80 k and a remarkable maximum power out of 30.4 W are obtained when the acceleration of 0.9 g (g is standard gravity acceleration) is applied.