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晶相MoO_3与载体γ-Al_2O_3充分混合后,在低于MoO_3熔点的适当温度下焙烧(例如400℃焙烧24小时),当MoO_3含量低于某一数值时,MoO_3晶相的X光衍射峰完全消失;MoO_3含量高于该数值时,晶相峰并不消失,但强度减弱。用X光衍射可测定焙烧后MoO_3的残余晶相量,进而可得到MoO_3在γ-Al_2O_3表面的最大分散量为0.12克/100米~2。这与按密置单层排布的模型计算所得到的理论量0.117克/100米~2非常一致。本文方法也适用于其它化合物在载体表面最大分散量的测定。
When the MoO_3 phase is sufficiently mixed with the carrier γ-Al_2O_3 and calcined at an appropriate temperature lower than the melting point of MoO_3 (for example, 400 ° C for 24 hours), the X-ray diffraction peak of the MoO_3 crystal phase is completely Disappears; When the content of MoO_3 is higher than this value, the peak of crystal phase does not disappear, but the intensity decreases. The residual crystalline phase of MoO 3 after roasting can be measured by X-ray diffraction, and the maximum dispersion of MoO 3 on γ-Al 2 O 3 surface can be obtained as 0.12 g / 100m -2. This is very close to the theoretical amount of 0.117 g / 100m ~ 2 calculated by the model of dense single layer arrangement. This method is also applicable to the determination of the maximum dispersion of other compounds on the surface of the support.