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在10千兆赫下单向功率增益为12分贝和最高振荡频率为40千兆赫的肖特基势垒栅砷化镓场效应晶体管已经研制成功,如图1所示。器件制作在锡掺杂的N型外延层上,该层是在半绝缘的<100>晶向的砷化镓衬底上从镓溶液中外延生长的。0.3微米厚度的外延层的掺杂浓度是7×10~(16)厘米~(-3),在同一薄层上测量到的迁移率是5000厘米~2/伏·秒。器件结构如图2所示。栅是铬-金做的,其厚为0.5微米,长为0.9微米,宽为500微米。它是由接触曝光和剥离工艺制造的。源-漏是金-锗合金接触。源和栅的间距是1微
Schottky barrier GaAs FETs with a unidirectional power gain of 12 dB and a maximum oscillation frequency of 40 GHz at 10 GHz have been developed, as shown in FIG. 1. The device is fabricated on a tin-doped N-type epitaxial layer that is epitaxially grown from a gallium solution on a semi-insulating <100> crystalline gallium arsenide substrate. The doping concentration of the epitaxial layer of 0.3 μm thickness is 7 × 10 ~ (16) cm -3 and the mobility measured on the same layer is 5000 cm 2 / V · sec. Device structure shown in Figure 2. The gate is made of chrome-gold with a thickness of 0.5 microns, a length of 0.9 microns and a width of 500 microns. It is made by contact exposure and stripping process. Source - drain is gold - germanium alloy contact. The spacing between the source and the gate is 1 micro