AlGaN/GaN HEMTs with 0.2μm V-gate recesses for X-band application

• 作 者: 王冲 何云龙 郑雪峰 郝跃 马晓华 张进城
• 机 构: Key Laboratory of Wide Band gap Semiconductor Materials and Devices,School of Microelectronics,Xidia
• 出 处: 半导体学报
• 发表日期: 2012年03期
• 关键词: AlGaN drain sapphire footprint etching isotropic anisotropic breakdown length cu

AlGaN/GaN HEMTs with 0.2μm V-gate recesses were developed.The 0.2μm recess lengths were shrunk from the 0.6μm designed gate footprint length after isotropic SiN deposition and anisotropic recessed gate dry etching.The AlGaN/GaN HEMTs with 0.2μm V-gate recesses on sapphire substrates exhibited a current gain cutoff frequency f_t of 35 GHz and a maximum frequency of oscillation f_(max) of 60 GHz.At 10 GHz frequency and 20 V drain bias,the V-gate recess devices exhibited an output power density of 4.44 W/mm with the associated power added efficiency as high as 49%.

AlGaN / GaN HEMTs with 0.2 μm V-gate recesses were developed. The 0.2 μm recessions were shrunk from the 0.6 μm designed gate footprint length after isotropic SiN deposition and anisotropic recessed gate dry etching. The AlGaN / GaN HEMTs with 0.2 μm V- gate recess on sapphire substrates exhibited a current gain cutoff frequency f_t of 35 GHz and a maximum frequency of oscillation f_ (max) of 60 GHz. At 10 GHz frequency and 20 V drain bias, the V-gate recession load an output power density of 4.44 W / mm with the associated power added efficiency as high as 49%.