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运用近场光谱方法研究了在蓝宝石衬底上用低压ＭＯＣＶＤ方法外延生长的ＧａＮ蓝光二极管的杂质发光光谱．研究结果表明近场光谱能够给出样品表面微区空间分辨的局域光谱信息，为研究样品表面微观发光机理提供了一个有力的手段．对近场光谱中各发光峰的强度随注入电流（电压）变化曲线的研究结果揭示出ＧａＮ蓝光二极管的能带中的施主能级，在ＧａＮ蓝绿光二极管的发光中和受主深能级同样都起着重要的作用．
Near-field spectroscopy was used to study the impurity emission spectra of GaN blue light-emitting diodes grown by low-pressure MOCVD on sapphire substrates. The results show that near-field spectroscopy can give the local spectral information of the spatial resolution of the sample surface, which provides a powerful means for studying the microscopic luminescence mechanism of the sample surface. The results of the study of the intensity of each emission peak in the near-field spectrum with the injection current (voltage) curve reveal that the donor level in the band of the GaN blue light diode is higher than the acceptor deep level in the light emission of the GaN blue-green light diode Also play an important role.