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测量了SiGe HBT直流增益在60Coγ辐照过程中随剂量及器件电流注入水平的变化。实验结果显示在累计辐照剂量超过5 000 Gy(Si)后,器件电流增益变化与辐照剂量存在线性反比关系,且增益损伤系数与器件电流注入水平有关;器件在受到总剂量为2.78×104Gy(Si)辐照后,器件静态基极电流Ib、集电极电流Ic、静态直流增益及最大振荡频率fmax出现不同程度退化;但器件其他电参数如截止频率fT、交流增益|H21|及结电容(CCBO)与辐照前相比未出现显著退化。利用MEDICI数值模拟分析了SiGe HBT参数退化机理。
The change of dose and device current injection level of SiGe HBT DC gain during 60Coγ irradiation was measured. The experimental results show that there is a linear inverse relationship between the current gain and the irradiation dose when the cumulative irradiation dose exceeds 5 000 Gy (Si), and the gain damage coefficient is related to the current injection level of the device. When the total dose is 2.78 × 104 Gy (Si), the static base current Ib, the collector current Ic, the static DC gain and the maximum oscillation frequency fmax degenerate to some extent. However, other device parameters such as the cut-off frequency fT, the AC gain | H21 | and the junction capacitance (CCBO) did not show significant degradation before irradiation. The degradation mechanism of SiGe HBT parameters was analyzed by MEDICI numerical simulation.