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以重掺杂Si片作为衬底,SiO2/聚甲基丙烯酸甲酯(PMMA)为双栅绝缘层,C60为有源层,制备了不同修饰层的有机场效应晶体管(OFETs);研究了不同修饰层的器件对于场效应性能的影响。实验表明,与未加修饰层的器件相比,经过修饰的器件性能有一定的提高,其中Alq3/LiF双修饰层器件的场效应迁移率达到最大,为1.6×10-2 cm2/V.s。根据热动力学反应关系分析表明,Alq3/LiF间的协同作用导致电极和有源层的接触势垒降低是器件性能提高的原因。
The organic-field-effect transistors (OFETs) with different modification layers were fabricated using heavily doped Si wafer as the substrate, SiO2 / PMMA as the double-gate insulating layer and C60 as the active layer. Effect of Modifying Layer Devices on Field Effect Performance. Experiments show that compared with unmodified devices, the performance of modified devices is improved. The maximum field effect mobility of Alq3 / LiF dual modifier is 1.6 × 10-2 cm2 / V · s. According to the analysis of the thermodynamic reaction relationship, the reduction of the contact barrier between the electrode and the active layer caused by the synergistic effect of Alq3 / LiF is the reason for the improvement of device performance.