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The major purpose of this paper is to find an alternative configuration that not only minimizes the limitations of single-gate(SG) MOSFETs but also provides the better replacement for future technology.In this paper,the electrical characteristics of SiGe double-gate N-MOSFET are demonstrated and compared with electrical characteristics of Si double-gate N-MOSFET.Furthermore,in this paper the electrical characteristics of Si doublegate N-MOSFET are demonstrated and compared with electrical characteristics of Si single-gate N-MOSFET.The simulations are carried out for the device at different operational voltages using Cogenda Visual TCAD tool.Moreover,we have designed its structure and studied both I_d-V_g characteristics for different voltages namely 0.05,0.1,0.5,0.8,1 and 1.5 V and I_d-V_d characteristics for different voltages namely 0.1,0.5,1 and 1.5 V at work functions 4.5,4.6 and 4.8 eV for this structure.The performance parameters investigated in this paper are threshold voltage,DIBL,subthreshold slope,GIDL,volume inversion and MMCR.
The major purpose of this paper is to find an alternative configuration that not only minimizes the limitations of single-gate (SG) MOSFETs but also provide the better replacement for future technology. This paper, the electrical characteristics of SiGe double-gate N- MOSFETs are demonstrated and compared with electrical characteristics of Si double-gate N-MOSFETs. Future and, in this paper the electrical characteristics of Si doublegate N-MOSFETs are demonstrated and compared with electrical characteristics of Si single-gate N-MOSFETs. carried out for the device at different operational voltages using Cogenda Visual TCAD tool. Moreover, we have designed its structure and studied both I_d-V_g characteristics for different voltages require 0.05,0.1,0.5,0.8,1 and 1.5 V and I_d-V_d characteristics for different ICs 0.1, 0.5, 1 and 1.5 V at work functions 4.5, 4.6 and 4.8 eV for this structure. The performance parameters investigated in this paper are threshold voltage, D IBL, subthreshold slope, GIDL, volume inversion and MMCR.