论文部分内容阅读
通过在InP基上单片集成光探测器和调制器,制作了三端光逻辑门.在不同的负载电阻下,器件显示了良好的“与”门功能.对芯片进行了622MHz的动态测试;在950Ω负载条件下,只需要约7mW的控制光功率即可获得大于7dB的动态消光比.
The three-terminal optical logic gate was fabricated by integrating the photodetector and the modulator monolithically on the InP substrate. The device showed good gate functions with different load resistances. The 622MHz dynamic Test; at 950Ω load conditions, only about 7mW of control light power to get more than 7dB dynamic extinction ratio.