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利用HSQ具有的高分辨率、高反差和低边缘粗糙度等突出的优点并通过大量的工艺实验,摸索出电子束曝光剂量、显影液配比、显影时间和显影温度等优化条件,对电子束曝光剂量与线条宽度的关系进行了探索,有效消除了由于散射电子和背散射电子产生的电子束曝光邻近效应的影响;通过显影液掺适量氯化钠的溶液配比的显影技术有效提高了图形对比度并且分析了氯化钠与HSQ的作用机理;利用二氧化碳超临界干燥法来抑制气液界面毛细管表面张力作用导致的抗蚀剂结构的坍塌和粘连。实验得到了高宽比为12∶1、侧壁陡直性良好的大面积密集纳米结构。
HSQ has the advantages of high resolution, high contrast and low edge roughness and other outstanding advantages and through a large number of process experiments to explore electron beam exposure dose, the ratio of developer, development time and development temperature and other optimization conditions, the electron beam Exposure dose and line width of the relationship was explored to effectively eliminate due to scattering electrons and backscattered electrons generated by electron beam exposure proximity effect; through the developer with appropriate amount of sodium chloride solution ratio of the imaging technology to effectively improve the graphics Contrast and analyzed the action mechanism of sodium chloride and HSQ; the use of carbon dioxide supercritical drying method to suppress the gas-liquid interface capillary surface tension caused by the collapse of the resist structure and adhesion. The experimental results show that the aspect ratio is 12: 1, and the steep sidewalls are good for large area dense nanostructures.