论文部分内容阅读
研究了一种采用非对称结构和注 Ge的部分耗尽 0 .8μm SOI n MOSFET的浮体效应 ,实验结果表明这种结构能够提高漏端击穿电压约 1V,减轻反常亚阈值斜率和 kink现象 .浮体效应的减少是由于源区的浅结和注 Ge引入的晶体缺陷减少了寄生的横向 npn晶体管的电流增益
The floating body effect of a partially depleted 0.8 μm SOI n MOSFET with asymmetric structure and Ge implants was investigated. The experimental results show that this structure can improve the breakdown voltage at the drain terminal by about 1V and reduce the abnormal sub-threshold slope and kink. The reduction of floating body effect is due to the shallow junction of the source region and the crystal defects introduced by Ge. The current gain of the parasitic lateral npn transistor is reduced